As promised, Qualcomm has detailed its flagship chipset at CES 2017. The company unveiled more details about the Snapdragon 835, which is the main choice of many manufacturers for upcoming 2017 flagship smartphones, but the company didn't want to say anything about which phones will get the Snapdragon 835.
It does sound like it will be worth waiting for in 2017 as it consumes 25% less power than the Snapdragon 821, which results in 2.5 more hours of run time on an average day of usage.
The chipset packs impressive 3 billion transistors and is built by Samsung, using an advanced 10-nanometer manufacturing process. One of the many improvements is the addition of Quick Charge 4.0, a new version that is fully compatible with USB Type-C industry standards. It charges 20% faster than Quick Charge 3.0, providing 5 hours of use from just 5 minutes of charging, and has new protections against overcharging.
The processor includes a new Kryo 820 cores, with high-performance cores running at 2.45 GHz and four low-power cores running at 1.9 GHz, both backed by dual channel LPDDR4x memory at 1,866 MHz and a new Adreno 540 GPU with support for DX12, Vulkan, OpenCL 2.0 and OpenGL ES 3.2. It also has an upgraded DSP inside.
The chipset also packs X16 Gigabit LTE modem, with 2x2 802.11ac MU-MIMO Wi-Fi and optional support for 802.11ad WiGig Wi-Fi connectivity. There is Bluetooth 5.0 support, which is the first SoC that supports the technology. Another big improvement is the improved support for dual-camera and hybrid autofocusing systems.
Last, but not least is the physical dimensions of the chip. Thanks to 10nm process, the chip is 35% smaller than the Snapdragon 820.It really looks good on the paper, hopefully it will be as good as Qualcomm is saying it is.